Deep levels of vanadium and vanadium-hydrogen complex in silicon

T. Sadoh, H. Nakashima, T. Tsurushima

研究成果: Contribution to journalArticle査読

40 被引用数 (Scopus)

抄録

Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of E C-0.20 eV and EC-0.45 eV, and a hole trap of E V+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of EC-0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO3. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.

本文言語英語
ページ(範囲)520-524
ページ数5
ジャーナルJournal of Applied Physics
72
2
DOI
出版ステータス出版済み - 1992

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

フィンガープリント

「Deep levels of vanadium and vanadium-hydrogen complex in silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル