Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals

S. Nakashima, T. Kato, S. Nishizawa, T. Mitani, H. Okumura, T. Yamamoto

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

We have investigated polishing-induced surface damage in nitrogen-doped {0001} 4H-SiC crystals with silicon and carbon faces through deep ultraviolet Raman microspectroscopy. The structural and electrical properties of the damaged layers were characterized as a function of the abrasive particle size, using pure phonon modes and a longitudinal-optical-phonon plasmon coupled mode as monitor bands. The degree of damage decreased with the size. Although abrasive polishing with finer particles enables the long-range order of the lattice to almost fully recover, the carrier density remains partly reduced in the polished surface layers. The number of defects that induces a reduction in the free carrier density differs between the Si and C faces of 4H-SiC crystals.

本文言語英語
ジャーナルJournal of the Electrochemical Society
153
4
DOI
出版ステータス出版済み - 4 1 2006
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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