Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates

S. Kamoi, N. Hasuike, K. Kisoda, H. Harima, K. Morita, Tanaka Satoru, A. Hashimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2009
ホスト出版物のサブタイトルICSCRM 2009
出版社Trans Tech Publications Ltd
ページ611-614
ページ数4
ISBN(印刷版)0878492798, 9780878492794
DOI
出版ステータス出版済み - 1 1 2010
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, ドイツ
継続期間: 10 11 200910 16 2009

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷版)0255-5476

その他

その他13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
国/地域ドイツ
CityNurnberg
Period10/11/0910/16/09

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル