Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates

S. Kamoi, N. Hasuike, K. Kisoda, H. Harima, K. Morita, Tanaka Satoru, A. Hashimoto

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2009
ホスト出版物のサブタイトルICSCRM 2009
出版者Trans Tech Publications Ltd
ページ611-614
ページ数4
ISBN(印刷物)0878492798, 9780878492794
DOI
出版物ステータス出版済み - 1 1 2010
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, ドイツ
継続期間: 10 11 200910 16 2009

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷物)0255-5476

その他

その他13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
ドイツ
Nurnberg
期間10/11/0910/16/09

Fingerprint

Graphite
ultraviolet spectroscopy
Ultraviolet spectroscopy
Graphene
Raman spectroscopy
graphene
Substrates
Ultraviolet lasers
Laser excitation
Sublimation
ultraviolet lasers
sublimation
Frequency bands
Raman scattering
manipulators
Compaction
Raman spectra
excitation
interactions

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kamoi, S., Hasuike, N., Kisoda, K., Harima, H., Morita, K., Satoru, T., & Hashimoto, A. (2010). Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. : Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 611-614). (Materials Science Forum; 巻数 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.611

Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. / Kamoi, S.; Hasuike, N.; Kisoda, K.; Harima, H.; Morita, K.; Satoru, Tanaka; Hashimoto, A.

Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. p. 611-614 (Materials Science Forum; 巻 645-648).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kamoi, S, Hasuike, N, Kisoda, K, Harima, H, Morita, K, Satoru, T & Hashimoto, A 2010, Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. : Silicon Carbide and Related Materials 2009: ICSCRM 2009. Materials Science Forum, 巻. 645-648, Trans Tech Publications Ltd, pp. 611-614, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, ドイツ, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.611
Kamoi S, Hasuike N, Kisoda K, Harima H, Morita K, Satoru T その他. Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. : Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd. 2010. p. 611-614. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.611
Kamoi, S. ; Hasuike, N. ; Kisoda, K. ; Harima, H. ; Morita, K. ; Satoru, Tanaka ; Hashimoto, A. / Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. pp. 611-614 (Materials Science Forum).
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