Defect analysis of SiC sublimation growth by the in-situ X-ray topography

T. Kato, N. Oyanagi, H. Yamaguchi, S. Nishizawa, K. Arai

研究成果: Contribution to journalConference article査読

抄録

Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

本文言語英語
ページ(範囲)295-298
ページ数4
ジャーナルMaterials Science Forum
353-356
DOI
出版ステータス出版済み - 2001
外部発表はい

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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