Defect analysis of SiC sublimation growth by the in-situ X-ray topography

T. Kato, N. Oyanagi, H. Yamaguchi, Shinichi Nishizawa, K. Arai

研究成果: ジャーナルへの寄稿Conference article


Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

ジャーナルMaterials Science Forum
出版物ステータス出版済み - 1 1 2001


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S., & Arai, K. (2001). Defect analysis of SiC sublimation growth by the in-situ X-ray topography. Materials Science Forum, 353-356, 295-298.