Defect analysis of SiC sublimation growth by the in-situ X-ray topography

T. Kato, N. Oyanagi, H. Yamaguchi, Shinichi Nishizawa, K. Arai

研究成果: ジャーナルへの寄稿Conference article

抜粋

Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

元の言語英語
ページ(範囲)295-298
ページ数4
ジャーナルMaterials Science Forum
353-356
出版物ステータス出版済み - 1 1 2001
外部発表Yes

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S., & Arai, K. (2001). Defect analysis of SiC sublimation growth by the in-situ X-ray topography. Materials Science Forum, 353-356, 295-298.