抄録
To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 182103 |
| ジャーナル | Applied Physics Letters |
| 巻 | 110 |
| 発行部数 | 18 |
| DOI | |
| 出版物ステータス | 出版済み - 5 1 2017 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Defect and field-enhancement characterization through electron-beam-induced current analysis. / Umezawa, Hitoshi; Gima, Hiroki; Driche, Khaled; Kato, Yukako; Yoshitake, Tsuyoshi; Mokuno, Yoshiaki; Gheeraert, Etienne.
：: Applied Physics Letters, 巻 110, 番号 18, 182103, 01.05.2017.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Defect and field-enhancement characterization through electron-beam-induced current analysis
AU - Umezawa, Hitoshi
AU - Gima, Hiroki
AU - Driche, Khaled
AU - Kato, Yukako
AU - Yoshitake, Tsuyoshi
AU - Mokuno, Yoshiaki
AU - Gheeraert, Etienne
PY - 2017/5/1
Y1 - 2017/5/1
N2 - To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.
AB - To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.
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U2 - 10.1063/1.4982590
DO - 10.1063/1.4982590
M3 - Article
AN - SCOPUS:85018412267
VL - 110
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 182103
ER -