Defect and field-enhancement characterization through electron-beam-induced current analysis

Hitoshi Umezawa, Hiroki Gima, Khaled Driche, Yukako Kato, Tsuyoshi Yoshitake, Yoshiaki Mokuno, Etienne Gheeraert

研究成果: Contribution to journalArticle査読

11 被引用数 (Scopus)

抄録

To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.

本文言語英語
論文番号182103
ジャーナルApplied Physics Letters
110
18
DOI
出版ステータス出版済み - 5 1 2017

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

フィンガープリント

「Defect and field-enhancement characterization through electron-beam-induced current analysis」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル