Defect and field-enhancement characterization through electron-beam-induced current analysis

Hitoshi Umezawa, Hiroki Gima, Khaled Driche, Yukako Kato, Tsuyoshi Yoshitake, Yoshiaki Mokuno, Etienne Gheeraert

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.

元の言語英語
記事番号182103
ジャーナルApplied Physics Letters
110
発行部数18
DOI
出版物ステータス出版済み - 5 1 2017

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electron beams
augmentation
defects
Schottky diodes
nonuniformity
time constant
depletion
leakage
roughness
lithography
diamonds
electrodes
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Defect and field-enhancement characterization through electron-beam-induced current analysis. / Umezawa, Hitoshi; Gima, Hiroki; Driche, Khaled; Kato, Yukako; Yoshitake, Tsuyoshi; Mokuno, Yoshiaki; Gheeraert, Etienne.

:: Applied Physics Letters, 巻 110, 番号 18, 182103, 01.05.2017.

研究成果: ジャーナルへの寄稿記事

Umezawa, Hitoshi ; Gima, Hiroki ; Driche, Khaled ; Kato, Yukako ; Yoshitake, Tsuyoshi ; Mokuno, Yoshiaki ; Gheeraert, Etienne. / Defect and field-enhancement characterization through electron-beam-induced current analysis. :: Applied Physics Letters. 2017 ; 巻 110, 番号 18.
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