Defect and growth analysis of SiC bulk single crystals with high nitrogen doping

Tomohisa Kato, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa, Kazuo Arai

研究成果: ジャーナルへの寄稿Conference article

16 引用 (Scopus)

抜粋

In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points for defect restraint. The growth was performed in two kinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greater than 1 × 10-19cm-3, defect propagation was confirmed in the vertical direction for a growth direction affected by the doping by x-ray topography. This phenomenon was not observed in the a-axis grown crystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases. Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopant does not increase too much without intention in grown layers with lower growth rate, for example at the beginning and end of the growth.

元の言語英語
ページ(範囲)239-242
ページ数4
ジャーナルMaterials Science Forum
556-557
出版物ステータス出版済み - 12 1 2007
外部発表Yes
イベント6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, 英国
継続期間: 9 3 20069 7 2007

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kato, T., Miura, T., Wada, K., Hozomi, E., Taniguchi, H., Nishizawa, S. I., & Arai, K. (2007). Defect and growth analysis of SiC bulk single crystals with high nitrogen doping. Materials Science Forum, 556-557, 239-242.