Defect and growth analysis of SiC bulk single crystals with high nitrogen doping

Physics

• Growth 100%
• Crystals 66%
• Defects 66%
• Growth Rate 33%
• Nitrogen 33%
• Impurities 16%
• Single Crystals 16%

Material Science

• Crystal 66%
• Defect 66%
• Sublimation Growth 50%
• Growth Rate 33%
• Impurity 16%
• Single Crystal 16%
• Carrier Concentration 16%
• Doping (Additives) 16%
• Topography 16%

Chemistry

• Crystalline Material 66%
• Doping 50%
• Analytical Method 33%
• Nitrogen 33%
• Single Crystalline Solid 16%
• Sublimation Method 16%
• Impurity 16%
• Doping Material 16%