Defect characterization and control for SiGe-on-insulator

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.

元の言語英語
ホスト出版物のタイトルICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ1525-1528
ページ数4
DOI
出版物ステータス出版済み - 12 1 2010
イベント2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国
継続期間: 11 1 201011 4 2010

出版物シリーズ

名前ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

その他

その他2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
中国
Shanghai
期間11/1/1011/4/10

Fingerprint

Defects
Hole concentration
Condensation
Annealing
Oxidation

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Wang, D., Yang, H., & Nakashima, H. (2010). Defect characterization and control for SiGe-on-insulator. : ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1525-1528). [5667501] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667501

Defect characterization and control for SiGe-on-insulator. / Wang, Dong; Yang, Haigui; Nakashima, Hiroshi.

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1525-1528 5667501 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Wang, D, Yang, H & Nakashima, H 2010, Defect characterization and control for SiGe-on-insulator. : ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667501, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1525-1528, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 中国, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667501
Wang D, Yang H, Nakashima H. Defect characterization and control for SiGe-on-insulator. : ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1525-1528. 5667501. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667501
Wang, Dong ; Yang, Haigui ; Nakashima, Hiroshi. / Defect characterization and control for SiGe-on-insulator. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1525-1528 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
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