Defect characterization and control for SiGe-on-insulator

Dong Wang, Haigui Yang, Hiroshi Nakashima

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.

本文言語英語
ホスト出版物のタイトルICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ1525-1528
ページ数4
DOI
出版ステータス出版済み - 2010
イベント2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国
継続期間: 11 1 201011 4 2010

出版物シリーズ

名前ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

その他

その他2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
国/地域中国
CityShanghai
Period11/1/1011/4/10

All Science Journal Classification (ASJC) codes

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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