Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals

Tomohisa Kato, Kazutoshi Kojima, Shinichi Nishizawa, Kazuo Arai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抜粋

We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1-3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
ページ315-318
ページ数4
出版物ステータス出版済み - 12 1 2005
外部発表Yes
イベント5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, イタリア
継続期間: 8 31 20049 4 2004

出版物シリーズ

名前Materials Science Forum
483-485
ISSN(印刷物)0255-5476

その他

その他5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
イタリア
Bologna
期間8/31/049/4/04

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kato, T., Kojima, K., Nishizawa, S., & Arai, K. (2005). Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals. : Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 315-318). (Materials Science Forum; 巻数 483-485).