Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals

Tomohisa Kato, Kazutoshi Kojima, Shinichi Nishizawa, Kazuo Arai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1-3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
ページ315-318
ページ数4
出版ステータス出版済み - 12 1 2005
外部発表はい
イベント5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, イタリア
継続期間: 8 31 20049 4 2004

出版物シリーズ

名前Materials Science Forum
483-485
ISSN(印刷版)0255-5476

その他

その他5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
国/地域イタリア
CityBologna
Period8/31/049/4/04

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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