Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Haigui Yang, Dong Wang, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura

研究成果: Contribution to journalArticle査読

11 被引用数 (Scopus)

抄録

SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (NA) in SGOI layer and interface-trap density (Dit) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high NA and Dit, Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H2 ambient. It was found that both Al-PDA and FGA effectively reduced NA and Dit for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of NA and Dit.

本文言語英語
ページ(範囲)2342-2345
ページ数4
ジャーナルThin Solid Films
518
9
DOI
出版ステータス出版済み - 2 26 2010

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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