Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Haigui Yang, Dong Wang, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

抄録

SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (N A ) in SGOI layer and interface-trap density (D it ) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high N A and D it , Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H 2 ambient. It was found that both Al-PDA and FGA effectively reduced N A and D it for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of N A and D it .

元の言語英語
ページ(範囲)2342-2345
ページ数4
ジャーナルThin Solid Films
518
発行部数9
DOI
出版物ステータス出版済み - 2 26 2010

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Personal digital assistants
insulators
Annealing
Defects
annealing
Gases
defects
Substrates
gases
MOSFET devices
metal oxide semiconductors
Oxides
Condensation
field effect transistors
condensation
traps
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. / Yang, Haigui; Wang, Dong; Nakashima, Hiroshi; Hirayama, Kana; Kojima, Satoshi; Ikeura, Shogo.

:: Thin Solid Films, 巻 518, 番号 9, 26.02.2010, p. 2342-2345.

研究成果: ジャーナルへの寄稿記事

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abstract = "SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge{\%}) were fabricated using Ge condensation technique. High acceptor concentration (N A ) in SGOI layer and interface-trap density (D it ) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high N A and D it , Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H 2 ambient. It was found that both Al-PDA and FGA effectively reduced N A and D it for low-Ge{\%} SGOI. However, with an increase in Ge{\%}, FGA became less effective while Al-PDA was very effective for the reduction of N A and D it .",
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T1 - Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

AU - Hirayama, Kana

AU - Kojima, Satoshi

AU - Ikeura, Shogo

PY - 2010/2/26

Y1 - 2010/2/26

N2 - SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (N A ) in SGOI layer and interface-trap density (D it ) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high N A and D it , Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H 2 ambient. It was found that both Al-PDA and FGA effectively reduced N A and D it for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of N A and D it .

AB - SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (N A ) in SGOI layer and interface-trap density (D it ) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high N A and D it , Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H 2 ambient. It was found that both Al-PDA and FGA effectively reduced N A and D it for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of N A and D it .

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