Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.
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