Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

研究成果: Contribution to journalArticle査読

抄録

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.

本文言語英語
ページ(範囲)H1221-H1224
ジャーナルJournal of the Electrochemical Society
158
12
DOI
出版ステータス出版済み - 2011

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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