抄録
Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | H1221-H1224 |
| ジャーナル | Journal of the Electrochemical Society |
| 巻 | 158 |
| 発行部数 | 12 |
| DOI | |
| 出版物ステータス | 出版済み - 11 22 2011 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
これを引用
Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator. / Wang, Dong; Yamamoto, Keisuke; Gao, Hongye; Yang, Haigui; Nakashima, Hiroshi.
：: Journal of the Electrochemical Society, 巻 158, 番号 12, 22.11.2011, p. H1221-H1224.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator
AU - Wang, Dong
AU - Yamamoto, Keisuke
AU - Gao, Hongye
AU - Yang, Haigui
AU - Nakashima, Hiroshi
PY - 2011/11/22
Y1 - 2011/11/22
N2 - Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.
AB - Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.
UR - http://www.scopus.com/inward/record.url?scp=81355132426&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=81355132426&partnerID=8YFLogxK
U2 - 10.1149/2.037112jes
DO - 10.1149/2.037112jes
M3 - Article
AN - SCOPUS:81355132426
VL - 158
SP - H1221-H1224
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 12
ER -