Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.

本文言語英語
ホスト出版物のタイトルChina Semiconductor Technology International Conference 2011, CSTIC 2011
ページ1117-1122
ページ数6
1
DOI
出版ステータス出版済み - 2011
イベント10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, 中国
継続期間: 3 13 20113 14 2011

出版物シリーズ

名前ECS Transactions
番号1
34
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他10th China Semiconductor Technology International Conference 2011, CSTIC 2011
国/地域中国
CityShanghai
Period3/13/113/14/11

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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