Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.

元の言語英語
ホスト出版物のタイトルChina Semiconductor Technology International Conference 2011, CSTIC 2011
ページ1117-1122
ページ数6
エディション1
DOI
出版物ステータス出版済み - 7 1 2011
イベント10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, 中国
継続期間: 3 13 20113 14 2011

出版物シリーズ

名前ECS Transactions
番号1
34
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

その他

その他10th China Semiconductor Technology International Conference 2011, CSTIC 2011
中国
Shanghai
期間3/13/113/14/11

Fingerprint

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance
Temperature
Sputtering
Raman spectroscopy
Heat treatment
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Wang, D., Yamamoto, K., Gao, H., Yang, H., & Nakashima, H. (2011). Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. : China Semiconductor Technology International Conference 2011, CSTIC 2011 (1 版, pp. 1117-1122). (ECS Transactions; 巻数 34, 番号 1). https://doi.org/10.1149/1.3567723

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. / Wang, Dong; Yamamoto, Keisuke; Gao, Hongye; Yang, Haigui; Nakashima, Hiroshi.

China Semiconductor Technology International Conference 2011, CSTIC 2011. 1. 編 2011. p. 1117-1122 (ECS Transactions; 巻 34, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

Wang, D, Yamamoto, K, Gao, H, Yang, H & Nakashima, H 2011, Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. : China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 Edn, ECS Transactions, 番号 1, 巻. 34, pp. 1117-1122, 10th China Semiconductor Technology International Conference 2011, CSTIC 2011, Shanghai, 中国, 3/13/11. https://doi.org/10.1149/1.3567723
Wang D, Yamamoto K, Gao H, Yang H, Nakashima H. Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. : China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 版 2011. p. 1117-1122. (ECS Transactions; 1). https://doi.org/10.1149/1.3567723
Wang, Dong ; Yamamoto, Keisuke ; Gao, Hongye ; Yang, Haigui ; Nakashima, Hiroshi. / Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. China Semiconductor Technology International Conference 2011, CSTIC 2011. 1. 版 2011. pp. 1117-1122 (ECS Transactions; 1).
@inproceedings{fac70cfc41c04afbb427fdfa6e932750,
title = "Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator",
abstract = "Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.",
author = "Dong Wang and Keisuke Yamamoto and Hongye Gao and Haigui Yang and Hiroshi Nakashima",
year = "2011",
month = "7",
day = "1",
doi = "10.1149/1.3567723",
language = "English",
isbn = "9781607682356",
series = "ECS Transactions",
number = "1",
pages = "1117--1122",
booktitle = "China Semiconductor Technology International Conference 2011, CSTIC 2011",
edition = "1",

}

TY - GEN

T1 - Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

AU - Wang, Dong

AU - Yamamoto, Keisuke

AU - Gao, Hongye

AU - Yang, Haigui

AU - Nakashima, Hiroshi

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.

AB - Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.

UR - http://www.scopus.com/inward/record.url?scp=79959677023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959677023&partnerID=8YFLogxK

U2 - 10.1149/1.3567723

DO - 10.1149/1.3567723

M3 - Conference contribution

AN - SCOPUS:79959677023

SN - 9781607682356

T3 - ECS Transactions

SP - 1117

EP - 1122

BT - China Semiconductor Technology International Conference 2011, CSTIC 2011

ER -