Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Physics

• Defects 100%
• Photoluminescence 75%
• Insulators 50%
• Axial Strain 50%
• Substrates 25%
• Temperature 25%
• Deposition 25%
• Evaluation 25%
• Electron Cyclotron Resonance 25%
• Sputtering 25%
• Raman Spectroscopy 25%
• Openings 25%

Engineering

• Defects 100%
• Strain Relaxation 75%
• Heat Treatment 50%
• Temperature 25%
• Surfaces 25%
• Thickness 25%
• Evaluation 25%
• Substrates 25%
• Sio2 Film 25%
• Related Defect 25%

Material Science

• Defect 100%
• Surface 25%