Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy

Satoru Tanaka, R. Scott Kern, James Bentley, Robert F. Davis

研究成果: ジャーナルへの寄稿記事

35 引用 (Scopus)

抄録

Defect formation mechanisms in AlN thin films grown on 6H-SiC(001) substrates have been investigated as a function of film thickness to 180 nm using conventional and high-resolution transmission electron microscopy (HRTEM). The presence of particular Si-terminated steps on the vicinal 6H-SiC surface caused the introduction of planar defects at the initial stage of growth. By contrast, micrographs of films deposited on the on-axis substrate showed a much lower density of defects. Atomistic structural models of the interface and deposited AlN are proposed based on the HRTEM images and the results of companion scanning tunneling microscopy (STM) studies of the vicinal 6H-SiC(001) surface. The introduction of additional defects, which were primarily threading dislocations, was observed with increasing thickness of the AlN films.

元の言語英語
ページ(範囲)1641-1647
ページ数7
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
発行部数3
出版物ステータス出版済み - 3 1 1996
外部発表Yes

Fingerprint

Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide
silicon carbides
molecular beam epitaxy
Thin films
Defects
defects
thin films
High resolution transmission electron microscopy
gases
transmission electron microscopy
high resolution
Scanning tunneling microscopy
Substrates
Film thickness
scanning tunneling microscopy
film thickness

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

@article{e2db16f5871341178567da0d6fc6da61,
title = "Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy",
abstract = "Defect formation mechanisms in AlN thin films grown on 6H-SiC(001) substrates have been investigated as a function of film thickness to 180 nm using conventional and high-resolution transmission electron microscopy (HRTEM). The presence of particular Si-terminated steps on the vicinal 6H-SiC surface caused the introduction of planar defects at the initial stage of growth. By contrast, micrographs of films deposited on the on-axis substrate showed a much lower density of defects. Atomistic structural models of the interface and deposited AlN are proposed based on the HRTEM images and the results of companion scanning tunneling microscopy (STM) studies of the vicinal 6H-SiC(001) surface. The introduction of additional defects, which were primarily threading dislocations, was observed with increasing thickness of the AlN films.",
author = "Satoru Tanaka and Kern, {R. Scott} and James Bentley and Davis, {Robert F.}",
year = "1996",
month = "3",
day = "1",
language = "English",
volume = "35",
pages = "1641--1647",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "3",

}

TY - JOUR

T1 - Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy

AU - Tanaka, Satoru

AU - Kern, R. Scott

AU - Bentley, James

AU - Davis, Robert F.

PY - 1996/3/1

Y1 - 1996/3/1

N2 - Defect formation mechanisms in AlN thin films grown on 6H-SiC(001) substrates have been investigated as a function of film thickness to 180 nm using conventional and high-resolution transmission electron microscopy (HRTEM). The presence of particular Si-terminated steps on the vicinal 6H-SiC surface caused the introduction of planar defects at the initial stage of growth. By contrast, micrographs of films deposited on the on-axis substrate showed a much lower density of defects. Atomistic structural models of the interface and deposited AlN are proposed based on the HRTEM images and the results of companion scanning tunneling microscopy (STM) studies of the vicinal 6H-SiC(001) surface. The introduction of additional defects, which were primarily threading dislocations, was observed with increasing thickness of the AlN films.

AB - Defect formation mechanisms in AlN thin films grown on 6H-SiC(001) substrates have been investigated as a function of film thickness to 180 nm using conventional and high-resolution transmission electron microscopy (HRTEM). The presence of particular Si-terminated steps on the vicinal 6H-SiC surface caused the introduction of planar defects at the initial stage of growth. By contrast, micrographs of films deposited on the on-axis substrate showed a much lower density of defects. Atomistic structural models of the interface and deposited AlN are proposed based on the HRTEM images and the results of companion scanning tunneling microscopy (STM) studies of the vicinal 6H-SiC(001) surface. The introduction of additional defects, which were primarily threading dislocations, was observed with increasing thickness of the AlN films.

UR - http://www.scopus.com/inward/record.url?scp=0030101622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030101622&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030101622

VL - 35

SP - 1641

EP - 1647

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

ER -