Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

Kaoru Toko, Takanori Tanaka, Yasuharu Ohta, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

抄録

Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from (111) by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (~1100 cm2/V s).

本文言語英語
ページ(範囲)1040-1043
ページ数4
ジャーナルIEEE Transactions on Information Theory
39
3
DOI
出版ステータス出版済み - 1 1 1993

All Science Journal Classification (ASJC) codes

  • 情報システム
  • コンピュータ サイエンスの応用
  • 図書館情報学

フィンガープリント

「Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル