Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

Kaoru Toko, Takanori Tanaka, Yasuharu Ohta, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

24 引用 (Scopus)

抄録

Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).

元の言語英語
記事番号152101
ジャーナルApplied Physics Letters
97
発行部数15
DOI
出版物ステータス出版済み - 10 11 2010

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melting
insulators
defects
seeds
hole mobility
crystal defects
high speed
transmission electron microscopy
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth. / Toko, Kaoru; Tanaka, Takanori; Ohta, Yasuharu; Sadoh, Taizoh; Miyao, Masanobu.

:: Applied Physics Letters, 巻 97, 番号 15, 152101, 11.10.2010.

研究成果: ジャーナルへの寄稿記事

@article{04af2d47a6864fba8b4d109ecfa7ca45,
title = "Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth",
abstract = "Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).",
author = "Kaoru Toko and Takanori Tanaka and Yasuharu Ohta and Taizoh Sadoh and Masanobu Miyao",
year = "2010",
month = "10",
day = "11",
doi = "10.1063/1.3493184",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

AU - Toko, Kaoru

AU - Tanaka, Takanori

AU - Ohta, Yasuharu

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2010/10/11

Y1 - 2010/10/11

N2 - Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).

AB - Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).

UR - http://www.scopus.com/inward/record.url?scp=77958092558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958092558&partnerID=8YFLogxK

U2 - 10.1063/1.3493184

DO - 10.1063/1.3493184

M3 - Article

AN - SCOPUS:77958092558

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152101

ER -