Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

Kaoru Toko, Takanori Tanaka, Yasuharu Ohta, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

24 被引用数 (Scopus)

抄録

Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).

本文言語英語
論文番号152101
ジャーナルApplied Physics Letters
97
15
DOI
出版ステータス出版済み - 10 11 2010

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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