Single-crystal Ge island arrays on SiO2 /Si structures are desired to merge advanced Ge devices into Si large scale integrated circuit (LSI). We have developed the rapid-melting-growth process of amorphous Ge by using Ni-imprint-induced Si (111) fine crystals (∼1 μmφ) as the growth seed. Arrays of (111) oriented single-crystal Ge islands with device size (∼10 mu;m φ) are uniformly fabricated on SiO2 /Si substrates. The cross-sectional transmission electron microscopy observation reveals that Ge islands include no dislocation or stacking fault. This method opens up a possibility to achieve hybrid SiGe-LSI with multifunctions.
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