Dehydrogenation-enhanced large strain (∼1.6%) in Si pillars covered by Si3N4 stress liners

Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

High-strain Si-pillars are desirable for achieving high-speed three-dimensional transistors. The effects of postannealing (400-1150C) on strain-enhancement in Si-pillars covered with Si3N4 stress-liners are investigated. Before annealing, the Si3N 4 stress-liners induce strain in Si, where the direction of strain, which can be compressive or tensile, depends on the Si3N4 deposition parameters. After postannealing (800C), the strain becomes highly compressive, because of dehydrogenation-induced structural relaxation in Si 3N4 films. Consequently, compressive strains (1.6) are induced in the 200-nm-thick Si-pillars covered in 200-nm-thick Si 3N4 films after high temperature postannealing (1000-1150C). This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.

本文言語英語
ジャーナルElectrochemical and Solid-State Letters
14
4
DOI
出版ステータス出版済み - 2011

All Science Journal Classification (ASJC) codes

  • 電気化学
  • 電子工学および電気工学
  • 材料科学(全般)
  • 化学工学(全般)
  • 物理化学および理論化学

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