TY - JOUR
T1 - Dehydrogenation-enhanced large strain (∼1.6%) in Si pillars covered by Si3N4 stress liners
AU - Kurosawa, Masashi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2011
Y1 - 2011
N2 - High-strain Si-pillars are desirable for achieving high-speed three-dimensional transistors. The effects of postannealing (400-1150C) on strain-enhancement in Si-pillars covered with Si3N4 stress-liners are investigated. Before annealing, the Si3N 4 stress-liners induce strain in Si, where the direction of strain, which can be compressive or tensile, depends on the Si3N4 deposition parameters. After postannealing (800C), the strain becomes highly compressive, because of dehydrogenation-induced structural relaxation in Si 3N4 films. Consequently, compressive strains (1.6) are induced in the 200-nm-thick Si-pillars covered in 200-nm-thick Si 3N4 films after high temperature postannealing (1000-1150C). This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.
AB - High-strain Si-pillars are desirable for achieving high-speed three-dimensional transistors. The effects of postannealing (400-1150C) on strain-enhancement in Si-pillars covered with Si3N4 stress-liners are investigated. Before annealing, the Si3N 4 stress-liners induce strain in Si, where the direction of strain, which can be compressive or tensile, depends on the Si3N4 deposition parameters. After postannealing (800C), the strain becomes highly compressive, because of dehydrogenation-induced structural relaxation in Si 3N4 films. Consequently, compressive strains (1.6) are induced in the 200-nm-thick Si-pillars covered in 200-nm-thick Si 3N4 films after high temperature postannealing (1000-1150C). This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.
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U2 - 10.1149/1.3551465
DO - 10.1149/1.3551465
M3 - Article
AN - SCOPUS:79951939705
VL - 14
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 4
ER -