TY - GEN
T1 - Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
AU - Saraya, T.
AU - Itou, K.
AU - Takakura, T.
AU - Fukui, M.
AU - Suzuki, S.
AU - Takeuchi, K.
AU - Tsukuda, M.
AU - Numasawa, Y.
AU - Satoh, K.
AU - Matsudai, T.
AU - Saito, W.
AU - Kakushima, K.
AU - Hoshii, T.
AU - Furukawa, K.
AU - Watanabe, M.
AU - Shigyo, N.
AU - Tsutsui, K.
AU - Iwai, H.
AU - Ogura, A.
AU - Nishizawa, S.
AU - Omura, I.
AU - Ohashi, H.
AU - Hiramoto, T.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.
AB - Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.
UR - http://www.scopus.com/inward/record.url?scp=85061837133&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85061837133&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2018.8614491
DO - 10.1109/IEDM.2018.8614491
M3 - Conference contribution
AN - SCOPUS:85061837133
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 8.4.1-8.4.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Y2 - 1 December 2018 through 5 December 2018
ER -