Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

Wataru Saito, Tomokazu Domon, Ichiro Omura, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Masakazu Yamaguchi

研究成果: Contribution to journalArticle査読

51 被引用数 (Scopus)

抄録

A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.

本文言語英語
ページ(範囲)326-328
ページ数3
ジャーナルIEEE Electron Device Letters
27
5
DOI
出版ステータス出版済み - 5 1 2006
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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