@conference{89dd0d0559e24c1fbe8274a352c36353,
title = "Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC",
author = "R. Oka and K. Yamamoto and Dong Wang and H. Nakashima and S. Hishiki and K. Kawamura",
year = "2019",
month = sep,
doi = "10.7567/SSDM.2019.PS-4-28",
language = "English",
pages = "777--778",
note = "2019 International Conference on Solid State Devices and Materials (SSDM2019) ; Conference date: 02-09-2019 Through 05-09-2019",
}