Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal

K. Yoshino, K. Nomoto, A. Kinoshita, T. Ikari, Y. Akaki, T. Yoshitake

    研究成果: Contribution to journalArticle査読

    26 被引用数 (Scopus)

    抄録

    CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.

    本文言語英語
    ページ(範囲)301-304
    ページ数4
    ジャーナルJournal of Materials Science: Materials in Electronics
    19
    4
    DOI
    出版ステータス出版済み - 4 2008

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 原子分子物理学および光学
    • 凝縮系物理学
    • 電子工学および電気工学

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