Dependency of arabidopsis thaliana growth on DC electric field intensity

Takamasa Okumura, Yuji Muramoto, Noriyuki Shimizu

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.

本文言語英語
論文番号6783087
ページ(範囲)913-917
ページ数5
ジャーナルIEEE Transactions on Dielectrics and Electrical Insulation
21
2
DOI
出版ステータス出版済み - 4 2014
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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