Deposition of amorphous CNx by d.c. and rf plasma sputtering using a rf radical nitrogen beam source

Y. Hayashi, M. M. Rahman, K. Kaneko, T. Soga, M. Umeno, T. Jimbo

    研究成果: Contribution to journalArticle査読

    1 被引用数 (Scopus)

    抄録

    Amorphous CNx thin films were deposited by d.c. and rf Ar plasma sputtering combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using ultraviolet-visible spectroscopy, X-ray photoelectron spectroscopy, a four-point-probe method and electron energy-loss spectroscopy. For the rf-sputtered films, the optical band gap was found to increase with the increase in the nitrogen content. For the d.c.-sputtered films, the optical gap first decreased to zero at low nitrogen content, and then increased with a further increase in the nitrogen content. C-K energy-loss near-edge structure (ELNES) showed a slight broadening on the lower energy side. The local environment of C and N atoms are almost similar as observed by comparing the C-K and N-K ELNESs.

    本文言語英語
    ページ(範囲)1178-1182
    ページ数5
    ジャーナルDiamond and Related Materials
    11
    3-6
    DOI
    出版ステータス出版済み - 3 2002

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 化学 (全般)
    • 機械工学
    • 材料化学
    • 電子工学および電気工学

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