Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method

Kenta Nakahara; Yuki Kawashima; Muneharu Sato; Takeaki Matsunaga; Kousuke Yamamoto; William Makoto Nakamura; Daisuke Yamashita; Hidefumi Matsuzaki; Giichiro Uchida; Kunihiro Kamataki; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.1109/PVSC.2010.5616514

Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

1 被引用数 (Scopus)

抄録

We have deposited cluster-free P-doped a-Si:H films using SiH ₄+PH₃ multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH₃]/[SiH₄]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PH_x radicals enhance surface reaction probability of SiH ₃ radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×10¹⁵ cm ^-3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.

本文言語	英語
ホスト出版物のタイトル	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
ページ	3722-3725
ページ数	4
DOI	https://doi.org/10.1109/PVSC.2010.5616514
出版ステータス	出版済み - 12 20 2010
イベント	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, 米国継続期間: 6 20 2010 → 6 25 2010

出版物シリーズ

名前	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN（印刷版）	0160-8371

その他

その他	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country	米国
City	Honolulu, HI
Period	6/20/10 → 6/25/10

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

文献へのアクセス

10.1109/PVSC.2010.5616514

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引用スタイル

Nakahara, K., Kawashima, Y., Sato, M., Matsunaga, T., Yamamoto, K., Nakamura, W. M., Yamashita, D., Matsuzaki, H., Uchida, G., Kamataki, K., Itagaki, N., Koga, K., & Shiratani, M. (2010). Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 3722-3725). [5616514] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616514

Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. / Nakahara, Kenta; Kawashima, Yuki; Sato, Muneharu; Matsunaga, Takeaki; Yamamoto, Kousuke; Nakamura, William Makoto; Yamashita, Daisuke; Matsuzaki, Hidefumi; Uchida, Giichiro; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 3722-3725 5616514 (Conference Record of the IEEE Photovoltaic Specialists Conference).

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakahara, K, Kawashima, Y, Sato, M, Matsunaga, T, Yamamoto, K, Nakamura, WM, Yamashita, D, Matsuzaki, H, Uchida, G, Kamataki, K , Itagaki, N , Koga, K & Shiratani, M 2010, Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5616514, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3722-3725, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, 米国, 6/20/10. https://doi.org/10.1109/PVSC.2010.5616514

Nakahara K, Kawashima Y, Sato M, Matsunaga T, Yamamoto K, Nakamura WM et al. Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 3722-3725. 5616514. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616514

Nakahara, Kenta ; Kawashima, Yuki ; Sato, Muneharu ; Matsunaga, Takeaki ; Yamamoto, Kousuke ; Nakamura, William Makoto ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Uchida, Giichiro ; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu. / Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. pp. 3722-3725 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method",

abstract = "We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.",

author = "Kenta Nakahara and Yuki Kawashima and Muneharu Sato and Takeaki Matsunaga and Kousuke Yamamoto and Nakamura, {William Makoto} and Daisuke Yamashita and Hidefumi Matsuzaki and Giichiro Uchida and Kunihiro Kamataki and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",

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AU - Nakahara, Kenta

AU - Kawashima, Yuki

AU - Sato, Muneharu

AU - Matsunaga, Takeaki

AU - Yamamoto, Kousuke

AU - Nakamura, William Makoto

AU - Yamashita, Daisuke

AU - Matsuzaki, Hidefumi

AU - Uchida, Giichiro

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2010/12/20

Y1 - 2010/12/20

N2 - We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.

AB - We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.

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