Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.

本文言語英語
ホスト出版物のタイトルProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
ページ3722-3725
ページ数4
DOI
出版ステータス出版済み - 12月 20 2010
イベント35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, 米国
継続期間: 6月 20 20106月 25 2010

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

その他

その他35th IEEE Photovoltaic Specialists Conference, PVSC 2010
国/地域米国
CityHonolulu, HI
Period6/20/106/25/10

!!!All Science Journal Classification (ASJC) codes

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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