TY - GEN
T1 - Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method
AU - Nakahara, Kenta
AU - Kawashima, Yuki
AU - Sato, Muneharu
AU - Matsunaga, Takeaki
AU - Yamamoto, Kousuke
AU - Nakamura, William Makoto
AU - Yamashita, Daisuke
AU - Matsuzaki, Hidefumi
AU - Uchida, Giichiro
AU - Kamataki, Kunihiro
AU - Itagaki, Naho
AU - Koga, Kazunori
AU - Shiratani, Masaharu
PY - 2010/12/20
Y1 - 2010/12/20
N2 - We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.
AB - We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.
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U2 - 10.1109/PVSC.2010.5616514
DO - 10.1109/PVSC.2010.5616514
M3 - Conference contribution
AN - SCOPUS:78650079804
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3722
EP - 3725
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -