### 抜粋

We deposited cluster-free P-doped a-Si:H films using a SiH_{4}+PH_{3} multi-hollow discharge plasma CVD method. The deposition rate sharply increased from 0.49 nm/s with an increasing gas flow rate ratio R = [PH_{3}]/[SiH_{4}] from 0% to 1.17 nm/s at R = 1.0%, then slightly increased to 1.27 nm/s for R = 10%. SiH* emission intensity monotonically increased with increasing R. The increase in deposition rate with increasing R was much higher than that of the SiH_{x} generation rate. The surface reaction probability β of SiH_{3} increased from 0.33 for R = 0% to 0.62 for R = 0.6%, then remained nearly constant for R > 0.6%. The sticking probability s of SiH_{3} increased from 0.1 for R = 0% to 0.162 for R = 0.6%, then slightly increased to 0.181 for R = 10%. These results suggest that PH_{x} radicals enhance the surface reaction probability and surface sticking probability of SiH_{3} radicals. We successfully deposited P-doped a-Si:H films with a low stabilized defect density of 2.9 × 10^{15} cm^{-3}. This defect density is much lower than that of conventional doped a-Si:H films.

元の言語 | 英語 |
---|---|

ページ（範囲） | 3013-3016 |

ページ数 | 4 |

ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |

巻 | 8 |

発行部数 | 10 |

DOI | |

出版物ステータス | 出版済み - 10 1 2011 |

### All Science Journal Classification (ASJC) codes

- Condensed Matter Physics

## フィンガープリント Deposition of cluster-free P-doped a-Si:H films using SiH<sub>4</sub>+PH<sub>3</sub> multi-hollow discharge plasma CVD' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

## これを引用

_{4}+PH

_{3}multi-hollow discharge plasma CVD.

*Physica Status Solidi (C) Current Topics in Solid State Physics*,

*8*(10), 3013-3016. https://doi.org/10.1002/pssc.201100229