## 抄録

We deposited cluster-free P-doped a-Si:H films using a SiH_{4}+PH_{3} multi-hollow discharge plasma CVD method. The deposition rate sharply increased from 0.49 nm/s with an increasing gas flow rate ratio R = [PH_{3}]/[SiH_{4}] from 0% to 1.17 nm/s at R = 1.0%, then slightly increased to 1.27 nm/s for R = 10%. SiH* emission intensity monotonically increased with increasing R. The increase in deposition rate with increasing R was much higher than that of the SiH_{x} generation rate. The surface reaction probability β of SiH_{3} increased from 0.33 for R = 0% to 0.62 for R = 0.6%, then remained nearly constant for R > 0.6%. The sticking probability s of SiH_{3} increased from 0.1 for R = 0% to 0.162 for R = 0.6%, then slightly increased to 0.181 for R = 10%. These results suggest that PH_{x} radicals enhance the surface reaction probability and surface sticking probability of SiH_{3} radicals. We successfully deposited P-doped a-Si:H films with a low stabilized defect density of 2.9 × 10^{15} cm^{-3}. This defect density is much lower than that of conventional doped a-Si:H films.

本文言語 | 英語 |
---|---|

ページ（範囲） | 3013-3016 |

ページ数 | 4 |

ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |

巻 | 8 |

号 | 10 |

DOI | |

出版ステータス | 出版済み - 10月 1 2011 |

## !!!All Science Journal Classification (ASJC) codes

- 凝縮系物理学

## フィンガープリント

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