TY - JOUR
T1 - Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method
AU - Ichida, D.
AU - Uchida, G.
AU - Seo, H.
AU - Kamataki, K.
AU - Itagaki, N.
AU - Koga, K.
AU - Shiratani, M.
PY - 2014
Y1 - 2014
N2 - We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.
AB - We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.
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U2 - 10.1088/1742-6596/518/1/012002
DO - 10.1088/1742-6596/518/1/012002
M3 - Conference article
AN - SCOPUS:84903471907
VL - 518
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012002
T2 - 26th Symposium on Plasma Sciences for Materials, SPSM 2013
Y2 - 23 September 2013 through 24 September 2013
ER -