Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method

D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

研究成果: ジャーナルへの寄稿Conference article

3 引用 (Scopus)

抄録

We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.

元の言語英語
記事番号012002
ジャーナルJournal of Physics: Conference Series
518
発行部数1
DOI
出版物ステータス出版済み - 1 1 2014
イベント26th Symposium on Plasma Sciences for Materials, SPSM 2013 - Fukuoka, 日本
継続期間: 9 23 20139 24 2013

Fingerprint

magnetron sputtering
nanoparticles
frequency shift
gas mixtures
crystallinity
radio frequencies
argon
Raman spectra
hydrogen
diffraction
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method. / Ichida, D.; Uchida, G.; Seo, H.; Kamataki, K.; Itagaki, N.; Koga, K.; Shiratani, M.

:: Journal of Physics: Conference Series, 巻 518, 番号 1, 012002, 01.01.2014.

研究成果: ジャーナルへの寄稿Conference article

@article{3b5239a5615d40c0a441e08c86c783c9,
title = "Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method",
abstract = "We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.",
author = "D. Ichida and G. Uchida and H. Seo and K. Kamataki and N. Itagaki and K. Koga and M. Shiratani",
year = "2014",
month = "1",
day = "1",
doi = "10.1088/1742-6596/518/1/012002",
language = "English",
volume = "518",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method

AU - Ichida, D.

AU - Uchida, G.

AU - Seo, H.

AU - Kamataki, K.

AU - Itagaki, N.

AU - Koga, K.

AU - Shiratani, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.

AB - We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.

UR - http://www.scopus.com/inward/record.url?scp=84903471907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903471907&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/518/1/012002

DO - 10.1088/1742-6596/518/1/012002

M3 - Conference article

AN - SCOPUS:84903471907

VL - 518

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012002

ER -