Deposition of high-quality a-Si:H by suppressing growth of a-Si clusters in SiH4 plasmas

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

The density of Si-particles in a small size range below 10nm (referred to as clusters) in SiH4 capacitively-coupled high-frequency discharges amounts to 1011cm-3 even under deposition conditions of device-quality a-Si:H films. The results reported until now regarding the growth of such clusters are shown to be reasonably understood by taking into account the effects of gas flow on the growth. The SiH2 bond formation in the a-Si films are found to be mainly contributed by incorporation of large clusters (clusters in a range above about 0.5 nm in size) rather than higher-order-silane (HOS) radicals [SinHx (n<5, x<2n+2)] in the plasma. By employing the cluster-suppressed plasma CVD reactors, the remarkable decrease in SiH2 bond density in the films is realized, leading to the deposition of a-Si:H films of less light-induced degradation. Based on the knowledge of cluster growth obtained until now, the reactor with a potentiality of high rate deposition of high-quality films is proposed and its preliminary results are presented.

本文言語英語
ホスト出版物のタイトルNEW VISTAS IN DUSTY PLASMAS
ホスト出版物のサブタイトルFourth International Conference on the Physics of Dusty Plasmas
ページ105-114
ページ数10
DOI
出版ステータス出版済み - 10 31 2005
イベント4th International Conference on the Physics of Dusty Plasmas - Orleans, フランス
継続期間: 6 13 20056 17 2005

出版物シリーズ

名前AIP Conference Proceedings
799
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

その他

その他4th International Conference on the Physics of Dusty Plasmas
国/地域フランス
CityOrleans
Period6/13/056/17/05

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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