Si oxynitride dielectric films having good electrical and structural characteristics were deposited at 130°C by a sputtering technique using an electron cyclotron resonance plasma. This was demonstrated by studying breakdown characteristics, chemical etch rate, refractive index, and chemical bonding characteristics as a function of the flow rate ratio of O2 to N2. At the optimum condition, the oxynitride films had refractive indexes in the range 1.5-1.6 and infra-red peak positions in the range 955-1035 cm-1, and showed a high breakdown field of 12-13 MV/cm. It was found that the breakdown field and charge trapping of the oxynitride films were superior to those of thermally grown oxide. These improvements are interpreted as being due to a suitable N-atom incorporation into the films during the deposition process, enabling the formation of a partial O-Si-N amorphous network.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 1997|
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