Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source

M. Shiratani, Jie Jin Hong Jie Jin, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

研究成果: Contribution to journalConference article査読

1 被引用数 (Scopus)

抄録

Effects of H irradiation on purifying Cu films and improving their surface roughness as well as size and orientation of Cu grains in the films have been examined using a newly developed plasma CVD reactor equipped with an H atom source, in which Cu(hfac)2 is supplied as the source material. The H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while it has no effect on the grain orientation. The decrease in dissociation degree of material gas leads to reduction of the surface reaction probability of Cu-containing radicals, which is important to realize conformal deposition in fine trenches. Using the control of dissociation degree of material gas independent of H irradiation, we have demonstrated conformal deposition of smooth Cu films in the trench using the developed plasma CVD reactor.

本文言語英語
ページ(範囲)D921-D926
ジャーナルMaterials Research Society Symposium - Proceedings
612
DOI
出版ステータス出版済み - 2000
イベントMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, 米国
継続期間: 4 23 20004 27 2000

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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