Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method

Takuya Nomura, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

元の言語英語
ホスト出版物のタイトルMicroelectromechanical Systems - Materials and Devices III
ページ203-207
ページ数5
出版物ステータス出版済み - 8 30 2010
イベント2009 MRS Fall Meeting - Boston, MA, 米国
継続期間: 11 29 200912 3 2009

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1222
ISSN(印刷物)0272-9172

会議

会議2009 MRS Fall Meeting
米国
Boston, MA
期間11/29/0912/3/09

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Nomura, T., Koga, K., Shiratani, M., Setsuhara, Y., Sekine, M., & Hori, M. (2010). Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method. : Microelectromechanical Systems - Materials and Devices III (pp. 203-207). (Materials Research Society Symposium Proceedings; 巻数 1222).