Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD

Takeaki Matsunaga, Yuki Kawashima, Kazunori Koga, Kenta Nakahara, William Makoto Nakamura, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.

本文言語英語
ホスト出版物のタイトルTENCON 2010 - 2010 IEEE Region 10 Conference
ページ2219-2221
ページ数3
DOI
出版ステータス出版済み - 12 1 2010
イベント2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, 日本
継続期間: 11 21 201011 24 2010

出版物シリーズ

名前IEEE Region 10 Annual International Conference, Proceedings/TENCON

その他

その他2010 IEEE Region 10 Conference, TENCON 2010
Country日本
CityFukuoka
Period11/21/1011/24/10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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