Depression of positive magneto-conductance due to anti-weak localization effect in annealed In2O3-ZnO thick films

B. Shinozaki, S. Ezaki, K. Hidaka, K. Makise, T. Asano, N. Kokubo, K. Yamada, K. Yano, H. Nakamura

研究成果: ジャーナルへの寄稿Conference article

1 引用 (Scopus)

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We investigated the magneto-conductivity Δ in three dimensional indium zinc oxide films with different resistivity ρ prepared by postannealing in air. The weak localization theory was fitted to data of Δ H) at temperatures below 50K by the use of suitable inelastic scattering time τi(T) and spin-orbit(S-O) scattering time τi. We found the ρ dependences of both times τ and τi in a range 1.5 × 10-3Ω < ρ 300K) <4 × 10 -6Ω. As ρ increases, the ratio τi/τ increases from ≈ .005 to ≈ .5 and the Δ - at low temperatures changes from positive to negative values. We suggest a picture that the annealing in air brings the change of the S-O scattering from light to heavy atoms, namely, oxygen to indium and/or zinc atoms.

元の言語英語
記事番号042052
ジャーナルJournal of Physics: Conference Series
400
発行部数PART 4
DOI
出版物ステータス出版済み - 1 1 2012
イベント26th International Conference on Low Temperature Physics, LT 2011 - Beijing, 中国
継続期間: 8 10 20118 17 2011

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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