Depth profile analyses of implanted deuterium in tungsten by secondary ion mass spectrometry

K. Tokunaga, M. Takayama, T. Muroga, N. Yoshida

研究成果: Contribution to journalArticle査読

18 被引用数 (Scopus)

抄録

In order to establish the method of analyses of implanted hydrogen isotopes by secondary ion mass spectrometry (SIMS) and to understand the accumulation process of hydrogen in plasma-facing materials, the depth profile of implanted deuterium in tungsten has been examined by SIMS. Introduction of oxygen on the specimen surface made it possible to analyze the depth profile in the near surface region. The deuterium distribution was found to depend on both the incident energy and fluence. Implanted deuterium was expected to be trapped by radiation defects of vacancy type after migration at room temperature. These results imply that the radiation damage by irradiation with hydrogen isotopes from plasma in fusion devices enhances the hydrogen isotope retention in the near surface regions.

本文言語英語
ページ(範囲)800-804
ページ数5
ジャーナルJournal of Nuclear Materials
220-222
DOI
出版ステータス出版済み - 1995

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

フィンガープリント

「Depth profile analyses of implanted deuterium in tungsten by secondary ion mass spectrometry」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル