In order to establish the method of analyses of implanted hydrogen isotopes by secondary ion mass spectrometry (SIMS) and to understand the accumulation process of hydrogen in plasma-facing materials, the depth profile of implanted deuterium in tungsten has been examined by SIMS. Introduction of oxygen on the specimen surface made it possible to analyze the depth profile in the near surface region. The deuterium distribution was found to depend on both the incident energy and fluence. Implanted deuterium was expected to be trapped by radiation defects of vacancy type after migration at room temperature. These results imply that the radiation damage by irradiation with hydrogen isotopes from plasma in fusion devices enhances the hydrogen isotope retention in the near surface regions.
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