Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

Helena Téllez, José M. Vadillo, Egbert Rodríguez Messmer, Javier Miguel-Sánchez, J. Javier Laserna

研究成果: Contribution to journalArticle

1 引用 (Scopus)

抜粋

Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar+ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.

元の言語英語
ページ(範囲)646-648
ページ数3
ジャーナルSurface and Interface Analysis
43
発行部数1-2
DOI
出版物ステータス出版済み - 1 2011

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Téllez, H., Vadillo, J. M., Messmer, E. R., Miguel-Sánchez, J., & Laserna, J. J. (2011). Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS. Surface and Interface Analysis, 43(1-2), 646-648. https://doi.org/10.1002/sia.3517