Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

研究成果: Contribution to journalArticle査読

81 被引用数 (Scopus)

抄録

High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mΩ · cm2 for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.

本文言語英語
ページ(範囲)106-111
ページ数6
ジャーナルIEEE Transactions on Electron Devices
52
1
DOI
出版ステータス出版済み - 1 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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