Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology

Syotaro Ono, Li Zhang, Hiroshi Ohta, Miho Watanabe, Wataru Saito, Shingo Sato, Hiroyuki Sugaya, Masakazu Yamaguchi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

6 被引用数 (Scopus)

抄録

600V-class superjunction (SJ)-MOSFETs were developed using our original high-resolution Scanning Spread Resistance Microscopy (SSRM) analysis technology [1] for optimization of trench filling process for the first time. The SSRM analysis is a powerful tool for the SJ structure design, because it can be achieved the measurement of two- dimensional (2D)-carrier profile and detect of minute voids. The measured profile was applicable for device simulation of the SJ-Diode and the estimated breakdown voltage was in good agreement with the experimental values. By the feed back of these results to the trench filling process, the breakdown voltage was increased and the trade-off characteristics between the breakdown voltage and the specific on-resistance were achieved to 685V/16.5mΩcm2 in the fabricated SJ-MOSFET.

本文言語英語
ホスト出版物のタイトルISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's
ページ303-306
ページ数4
DOI
出版ステータス出版済み - 12 1 2009
外部発表はい
イベント21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09 - Barcelona, スペイン
継続期間: 6 14 20096 18 2009

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷版)1063-6854

会議

会議21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09
Countryスペイン
CityBarcelona
Period6/14/096/18/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

フィンガープリント 「Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル