Development of a nonperiodic boundary practical simulator for oxide and shallow trench isolation chemical mechanical polishing processes

Atsushi Ohtake, Toshiyuki Arai, Syuhei Kurokawa, Toshiro Doi

研究成果: Contribution to journalArticle査読

抄録

We developed a fast simulator for the chemical mechanical polishing (CMP) process that works in nonperiodic boundary conditions. Since periodic boundary conditions are not used, it can calculate anywhere on a wafer, such as the wafer's edge. Additionally, we enhanced the simulator to calculate the shallow trench isolation (STI)-CMP process. In the STI-CMP simulation method, additionally required simulation parameters are only one, under the assumption that dishing reaches steady state in enough short time relative to total polishing time. We found that the simulation results could match experimental film thicknesses with an error range of about 10-20 nm and that the calculation time was reduced to 1/20 relative to when the acceleration method was not introduced.

本文言語英語
ページ(範囲)H142-H145
ジャーナルJournal of the Electrochemical Society
158
2
DOI
出版ステータス出版済み - 1 5 2011

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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