Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application

Yukinobu Watanabe, Akihiro Kodama, Yasuyuki Tukamoto, Hideki Nakashima

研究成果: 著書/レポートタイプへの貢献会議での発言

6 引用 (Scopus)

抄録

We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed.

元の言語英語
ホスト出版物のタイトルInternational Conference on Nuclear Data for Science and Technology
ページ1646-1649
ページ数4
DOI
出版物ステータス出版済み - 5 24 2005
イベントInternational Conference on Nuclear Data for Science and Technology - Santa Fe, NM, 米国
継続期間: 9 26 200410 1 2004

出版物シリーズ

名前AIP Conference Proceedings
769
ISSN(印刷物)0094-243X
ISSN(電子版)1551-7616

その他

その他International Conference on Nuclear Data for Science and Technology
米国
Santa Fe, NM
期間9/26/0410/1/04

Fingerprint

single event upsets
microelectronics
nuclear reactions
neutrons
silicon
simulation
cross sections
cosmic rays
energy
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Watanabe, Y., Kodama, A., Tukamoto, Y., & Nakashima, H. (2005). Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application. : International Conference on Nuclear Data for Science and Technology (pp. 1646-1649). (AIP Conference Proceedings; 巻数 769). https://doi.org/10.1063/1.1945323

Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application. / Watanabe, Yukinobu; Kodama, Akihiro; Tukamoto, Yasuyuki; Nakashima, Hideki.

International Conference on Nuclear Data for Science and Technology. 2005. p. 1646-1649 (AIP Conference Proceedings; 巻 769).

研究成果: 著書/レポートタイプへの貢献会議での発言

Watanabe, Y, Kodama, A, Tukamoto, Y & Nakashima, H 2005, Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application. : International Conference on Nuclear Data for Science and Technology. AIP Conference Proceedings, 巻. 769, pp. 1646-1649, International Conference on Nuclear Data for Science and Technology, Santa Fe, NM, 米国, 9/26/04. https://doi.org/10.1063/1.1945323
Watanabe Y, Kodama A, Tukamoto Y, Nakashima H. Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application. : International Conference on Nuclear Data for Science and Technology. 2005. p. 1646-1649. (AIP Conference Proceedings). https://doi.org/10.1063/1.1945323
Watanabe, Yukinobu ; Kodama, Akihiro ; Tukamoto, Yasuyuki ; Nakashima, Hideki. / Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application. International Conference on Nuclear Data for Science and Technology. 2005. pp. 1646-1649 (AIP Conference Proceedings).
@inproceedings{de0fb6ac82de455bbf1cb6c9d8c8fa11,
title = "Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application",
abstract = "We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed.",
author = "Yukinobu Watanabe and Akihiro Kodama and Yasuyuki Tukamoto and Hideki Nakashima",
year = "2005",
month = "5",
day = "24",
doi = "10.1063/1.1945323",
language = "English",
isbn = "073540254X",
series = "AIP Conference Proceedings",
pages = "1646--1649",
booktitle = "International Conference on Nuclear Data for Science and Technology",

}

TY - GEN

T1 - Development of a nuclear reaction database on silicon for simulation of neutron-induced single-event upsets in microelectronics and its application

AU - Watanabe, Yukinobu

AU - Kodama, Akihiro

AU - Tukamoto, Yasuyuki

AU - Nakashima, Hideki

PY - 2005/5/24

Y1 - 2005/5/24

N2 - We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed.

AB - We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33749502822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749502822&partnerID=8YFLogxK

U2 - 10.1063/1.1945323

DO - 10.1063/1.1945323

M3 - Conference contribution

SN - 073540254X

SN - 9780735402546

T3 - AIP Conference Proceedings

SP - 1646

EP - 1649

BT - International Conference on Nuclear Data for Science and Technology

ER -