抄録
EUV lithography is scheduled on the international technology roadmap for semiconductors (ITRS). In order to introduce the EUV light source into the production lines, EUV light sources having an average power of more than 100 W at 13.5 nm are needed. Such EUV light sources have been under development by using the laser-produced plasma (LPP) or the discharge-produced plasma (DPP). In the case of Sn LPP, the efficiency is several times higher than that of Xe LPP, but the problem of debris generation that limits the lifetime of the optics in the lithographic system is serious. The mechanism of debris generation is considered to be splashes of a melted surface by rapid heating of the sub-surface within a depth of about 100 nm. So we have suspected that the nano-particles with a diameter of less than 100 nm produce no debris, because the sub-surface can not be produced within such a small particle. In this study, we developed nano-structured SnO2 targets and investigated the emission characteristics of EUV light from CO2 laser produced plasma with those targets.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 49 |
| ページ（範囲） | 313-318 |
| ページ数 | 6 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 5662 |
| DOI | |
| 出版物ステータス | 出版済み - 12 1 2004 |
| イベント | Fifth International Symposium on Laser Precision Microfabrication - Nara, 日本 継続期間: 5 11 2004 → 5 14 2004 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
これを引用
Development of EUV light source by CO2 laser-produced plasma with nano-structured SnO2 targets. / Tanaka, H.; Akinaga, K.; Takahashi, A.; Okada, T.
：: Proceedings of SPIE - The International Society for Optical Engineering, 巻 5662, 49, 01.12.2004, p. 313-318.研究成果: ジャーナルへの寄稿 › Conference article
}
TY - JOUR
T1 - Development of EUV light source by CO2 laser-produced plasma with nano-structured SnO2 targets
AU - Tanaka, H.
AU - Akinaga, K.
AU - Takahashi, A.
AU - Okada, T.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - EUV lithography is scheduled on the international technology roadmap for semiconductors (ITRS). In order to introduce the EUV light source into the production lines, EUV light sources having an average power of more than 100 W at 13.5 nm are needed. Such EUV light sources have been under development by using the laser-produced plasma (LPP) or the discharge-produced plasma (DPP). In the case of Sn LPP, the efficiency is several times higher than that of Xe LPP, but the problem of debris generation that limits the lifetime of the optics in the lithographic system is serious. The mechanism of debris generation is considered to be splashes of a melted surface by rapid heating of the sub-surface within a depth of about 100 nm. So we have suspected that the nano-particles with a diameter of less than 100 nm produce no debris, because the sub-surface can not be produced within such a small particle. In this study, we developed nano-structured SnO2 targets and investigated the emission characteristics of EUV light from CO2 laser produced plasma with those targets.
AB - EUV lithography is scheduled on the international technology roadmap for semiconductors (ITRS). In order to introduce the EUV light source into the production lines, EUV light sources having an average power of more than 100 W at 13.5 nm are needed. Such EUV light sources have been under development by using the laser-produced plasma (LPP) or the discharge-produced plasma (DPP). In the case of Sn LPP, the efficiency is several times higher than that of Xe LPP, but the problem of debris generation that limits the lifetime of the optics in the lithographic system is serious. The mechanism of debris generation is considered to be splashes of a melted surface by rapid heating of the sub-surface within a depth of about 100 nm. So we have suspected that the nano-particles with a diameter of less than 100 nm produce no debris, because the sub-surface can not be produced within such a small particle. In this study, we developed nano-structured SnO2 targets and investigated the emission characteristics of EUV light from CO2 laser produced plasma with those targets.
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UR - http://www.scopus.com/inward/citedby.url?scp=20344391392&partnerID=8YFLogxK
U2 - 10.1117/12.596357
DO - 10.1117/12.596357
M3 - Conference article
AN - SCOPUS:20344391392
VL - 5662
SP - 313
EP - 318
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
M1 - 49
ER -