Development of EUV light source by CO2 laser-produced Xe plasma

H. Tanaka, K. Akinaga, A. Takahashi, T. Okada

研究成果: Contribution to journalConference article査読

4 被引用数 (Scopus)

抄録

We propose CO2 laser-produced plasma as the extreme ultraviolet (EUV) light source for future optical lithography. The laser beam from a transversely-excited atmospheric (TEA) CO2 laser (4 J, 50 ns FWHM) was focused on a Xe gas target and a Xe cryogenic target to generate EUV radiation around 13.5 nm. The EUV pulse of about 100 ns in FWHM was measured 50 ns after the CO2 laser irradiation. The EUV spectra were measured by an X-ray CCD camera with a transmission grating spectrograph (TGS). A characteristic EUV spectrum was observed from CO2 laser produced Xe plasma. The EUV energy was measured by a Flying Circus II detecting system and an output energy of 3 mJ/pulse and a conversion efficiency of about 0.1 % per 2π sr at 13.5 nm (2% B.W.) were obtained with Xe targets. These values are comparable to those of YAG laser-produced Xe plasma, indicating the potential scalability of the EUV light source using a CO2 laser produced plasma.

本文言語英語
論文番号57
ページ(範囲)361-366
ページ数6
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
5662
DOI
出版ステータス出版済み - 12 1 2004
イベントFifth International Symposium on Laser Precision Microfabrication - Nara, 日本
継続期間: 5 11 20045 14 2004

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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