Development of Gamma-Ray Transition-Edge-Sensor Microcalorimeters on Thick Membranes

Naoko Iyomoto, Ikumi Yoshimine, Yuki Shuto, Takehiro Kuroiwa, Keisuke Maehata, Tasuku Hayashi, Haruka Muramatsu, Kenichiro Nagayoshi, Kazuhisa Mitsuda, Akira Takano, Shota Yoshimoto, Yuta Kurume, Kenji Ishibashi

研究成果: ジャーナルへの寄稿記事

抄録

We developed transition-edge-sensor microcalorimeters to detect gamma rays of energy up to a few MeV. To develop devices that have mechanical robustness and fast response together with reasonable thermal isolation, we fabricated devices with thick (17 μm or 9.5 μm) membranes using silicon-on-insulator wafers. Here, we report the results for one of each device. The thermal conductances of the 17-μm-thick-membrane device and the 9.5-μm-thick-membrane device were measured to be 84 nW/K and 52 nW/K at their transition temperatures of 162 mK and 202 mK, respectively. The thermal conductances are 20–30 times and 6–9 times larger than those of our thin-membrane devices, when compared at the same temperatures. We irradiated the devices with gamma rays from a Cs-137 source. About 30% of the accumulated pulses are signals from the absorbers, while the remaining are signals from the silicon substrates. The energy resolution of the 662-keV photo peak for the 17-μm-thick-membrane device is 2.2 keV, whereas the baseline energy resolution is 2.3 keV. The energy resolution is several times worse than the design value. One reason for the degradation of the energy resolution is the low-frequency noise of the mechanical cooler, and the other reason is the thermal noise arising from the Compton-scattering events in the substrate.

元の言語英語
ページ(範囲)412-417
ページ数6
ジャーナルJournal of Low Temperature Physics
194
発行部数5-6
DOI
出版物ステータス出版済み - 3 15 2019

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Gamma rays
calorimeters
gamma rays
membranes
Membranes
sensors
Sensors
Silicon
Compton scattering
Thermal noise
Substrates
Superconducting transition temperature
energy
photopeak
thermal noise
silicon
Degradation
coolers
isolation
absorbers

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

これを引用

Development of Gamma-Ray Transition-Edge-Sensor Microcalorimeters on Thick Membranes. / Iyomoto, Naoko; Yoshimine, Ikumi; Shuto, Yuki; Kuroiwa, Takehiro; Maehata, Keisuke; Hayashi, Tasuku; Muramatsu, Haruka; Nagayoshi, Kenichiro; Mitsuda, Kazuhisa; Takano, Akira; Yoshimoto, Shota; Kurume, Yuta; Ishibashi, Kenji.

:: Journal of Low Temperature Physics, 巻 194, 番号 5-6, 15.03.2019, p. 412-417.

研究成果: ジャーナルへの寄稿記事

Iyomoto, N, Yoshimine, I, Shuto, Y, Kuroiwa, T, Maehata, K, Hayashi, T, Muramatsu, H, Nagayoshi, K, Mitsuda, K, Takano, A, Yoshimoto, S, Kurume, Y & Ishibashi, K 2019, 'Development of Gamma-Ray Transition-Edge-Sensor Microcalorimeters on Thick Membranes', Journal of Low Temperature Physics, 巻. 194, 番号 5-6, pp. 412-417. https://doi.org/10.1007/s10909-018-2100-3
Iyomoto, Naoko ; Yoshimine, Ikumi ; Shuto, Yuki ; Kuroiwa, Takehiro ; Maehata, Keisuke ; Hayashi, Tasuku ; Muramatsu, Haruka ; Nagayoshi, Kenichiro ; Mitsuda, Kazuhisa ; Takano, Akira ; Yoshimoto, Shota ; Kurume, Yuta ; Ishibashi, Kenji. / Development of Gamma-Ray Transition-Edge-Sensor Microcalorimeters on Thick Membranes. :: Journal of Low Temperature Physics. 2019 ; 巻 194, 番号 5-6. pp. 412-417.
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abstract = "We developed transition-edge-sensor microcalorimeters to detect gamma rays of energy up to a few MeV. To develop devices that have mechanical robustness and fast response together with reasonable thermal isolation, we fabricated devices with thick (17 μm or 9.5 μm) membranes using silicon-on-insulator wafers. Here, we report the results for one of each device. The thermal conductances of the 17-μm-thick-membrane device and the 9.5-μm-thick-membrane device were measured to be 84 nW/K and 52 nW/K at their transition temperatures of 162 mK and 202 mK, respectively. The thermal conductances are 20–30 times and 6–9 times larger than those of our thin-membrane devices, when compared at the same temperatures. We irradiated the devices with gamma rays from a Cs-137 source. About 30{\%} of the accumulated pulses are signals from the absorbers, while the remaining are signals from the silicon substrates. The energy resolution of the 662-keV photo peak for the 17-μm-thick-membrane device is 2.2 keV, whereas the baseline energy resolution is 2.3 keV. The energy resolution is several times worse than the design value. One reason for the degradation of the energy resolution is the low-frequency noise of the mechanical cooler, and the other reason is the thermal noise arising from the Compton-scattering events in the substrate.",
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AU - Yoshimine, Ikumi

AU - Shuto, Yuki

AU - Kuroiwa, Takehiro

AU - Maehata, Keisuke

AU - Hayashi, Tasuku

AU - Muramatsu, Haruka

AU - Nagayoshi, Kenichiro

AU - Mitsuda, Kazuhisa

AU - Takano, Akira

AU - Yoshimoto, Shota

AU - Kurume, Yuta

AU - Ishibashi, Kenji

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