Fujikura Ltd., Chiba, Japan, has developed stable and high-throughput production techniques for REBCO coated conductors (CC) by using large-area ion-beam-assisted-deposition (IBAD), and hot-wall type pulsed-laser-deposition (PLD). Recently, we have been attempting to dope BaMO3 (BMO, M: Zr or Hf) to REBCO layer in order to enhance in-field critical current density (Jc). In the course of optimizing deposition conditions of PLD for BaHfO3 doped EuBCO films on IBAD templates, "high Jc condition" and "high growth rate condition" were found. For samples prepared under these conditions, the magnetic field angle dependence of Ic and REBCO thickness dependence were investigated. Finally, we succeeded in fabricating a 300-m-long CC with uniform Ic distribution at the high-growth-rate condition. The longitudinal Ic homogeneity (defined as standard deviation divided by average) at 77 K evaluated by magnetization method was 2.6%, which is comparable to nondoped conductors. Transport in-field Ic for the both end points were 1756 and 1786 A/cm at 30 K, 2 T, respectively.
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