It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the activation energy of crystal-nucleus formation is higher than that of grain growth. To realize low-temperature crystallization, we tried to form the quasi-nucleus by soft X-ray irradiation. In this study, the effects of soft X-ray irradiation on crystallization of a-Si and a-Ge films were investigated. The crystallization temperatures of a-Si film and a-Ge film were decreased from 680℃ to 580℃ and 500℃ to 420℃ by soft X-ray irradiation, respectively. The decrease in crystallization temperature is also related to enhancement of atomic migration and atoms transitioning into a quasi-nuclei phase in the films.
|寄稿の翻訳タイトル||Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source|
|ジャーナル||IEICE technical report|
|出版ステータス||出版済み - 12 16 2011|