Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts

研究成果: ジャーナルへの寄稿記事

抄録

Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, it is desirable that the source/drain (S/D) junctions are composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the contact formation showing a low electron barrier height (ΦBN) is very difficult. We have found TiN on Ge is superior as a low Φ BN contact. In this paper, we present the detailed fabrication and the electrical performance of a TiN/Ge contact. Furthermore, we present the excellence of a HfGe/Ge contact showing a low hole barrier height (ΦBP). Finally, we present the fabrication and device performance of metal S/D n- and p-MOSFETs using TiN/Ge and HfGe/Ge contacts, respectively.

元の言語英語
ページ(範囲)167-178
ページ数12
ジャーナルECS Transactions
58
発行部数9
DOI
出版物ステータス出版済み - 1 1 2013

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Fabrication
Carrier mobility
Fermi level
Metals
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts. / Nakashima, Hiroshi; Yamamoto, Keisuke; Wang, Dong.

:: ECS Transactions, 巻 58, 番号 9, 01.01.2013, p. 167-178.

研究成果: ジャーナルへの寄稿記事

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