抄録
Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, it is desirable that the source/drain (S/D) junctions are composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the contact formation showing a low electron barrier height (ΦBN) is very difficult. We have found TiN on Ge is superior as a low Φ BN contact. In this paper, we present the detailed fabrication and the electrical performance of a TiN/Ge contact. Furthermore, we present the excellence of a HfGe/Ge contact showing a low hole barrier height (ΦBP). Finally, we present the fabrication and device performance of metal S/D n- and p-MOSFETs using TiN/Ge and HfGe/Ge contacts, respectively.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 167-178 |
| ページ数 | 12 |
| ジャーナル | ECS Transactions |
| 巻 | 58 |
| 発行部数 | 9 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2013 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
これを引用
Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts. / Nakashima, Hiroshi; Yamamoto, Keisuke; Wang, Dong.
：: ECS Transactions, 巻 58, 番号 9, 01.01.2013, p. 167-178.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts
AU - Nakashima, Hiroshi
AU - Yamamoto, Keisuke
AU - Wang, Dong
PY - 2013/1/1
Y1 - 2013/1/1
N2 - Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, it is desirable that the source/drain (S/D) junctions are composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the contact formation showing a low electron barrier height (ΦBN) is very difficult. We have found TiN on Ge is superior as a low Φ BN contact. In this paper, we present the detailed fabrication and the electrical performance of a TiN/Ge contact. Furthermore, we present the excellence of a HfGe/Ge contact showing a low hole barrier height (ΦBP). Finally, we present the fabrication and device performance of metal S/D n- and p-MOSFETs using TiN/Ge and HfGe/Ge contacts, respectively.
AB - Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, it is desirable that the source/drain (S/D) junctions are composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the contact formation showing a low electron barrier height (ΦBN) is very difficult. We have found TiN on Ge is superior as a low Φ BN contact. In this paper, we present the detailed fabrication and the electrical performance of a TiN/Ge contact. Furthermore, we present the excellence of a HfGe/Ge contact showing a low hole barrier height (ΦBP). Finally, we present the fabrication and device performance of metal S/D n- and p-MOSFETs using TiN/Ge and HfGe/Ge contacts, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84904876020&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904876020&partnerID=8YFLogxK
U2 - 10.1149/05809.0167ecst
DO - 10.1149/05809.0167ecst
M3 - Article
AN - SCOPUS:84904876020
VL - 58
SP - 167
EP - 178
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 9
ER -