Development of resistance welding for silicon carbide

K. Hamasuna, C. Iwamoto, S. Satonaka, M. Nishida, R. Tomoshige, M. Fujita

研究成果: ジャーナルへの寄稿学術誌査読

抄録

Resistance welding was applied to the bonding of SiC to metals. The welded interface structure was observed by high-resolution transmission electron microscopy to reveal the reaction during welding. The maximum bonding temperature of SiC varied with the rate of welding current rise. At the welded interface, Al4C3, Al and an amorphous phase were formed adjacent to SiC in the SiC/Al system. The SiC/Al interface was flat at the atomic level and the crystallographic orientation relationship between SiC and Al was observed. For the SiC/Ag-Cu-Ti alloy system, the reaction phases TiC and Ti5Si3 were formed at the interface. The thickness of the reaction phases varied with the rate of welding current rise, and, under specific welding conditions, Ag formed directly adjacent to SiC without the reaction phases.

本文言語英語
ページ(範囲)1060-1063
ページ数4
ジャーナルMaterials Transactions
48
5
DOI
出版ステータス出版済み - 5月 2007

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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