Development of strained Si-SiGe-on-insulator wafers for high speed ULSI

Hiroshi Nakashima, Masanobu Miyao, Masahiko Nakamae, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Strain relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method was investigated as a function of SiGe thickness. Complete relaxation was obtained for SiGe layer having the thickness of more than 60 nm, leading to the establishment of highly relaxed SGOI wafer fabrication. The photoluminescence evaluation of the strained Si/SGOI wafers showed high Ge fraction degrades crystallinity of St-Si/SGOI wafer, and high Ge condensation temperature is beneficial to the crystallinity enhancement. CMOS inverters and ring oscillators were fabricated to evaluate the impact of Strained-Si/SGOI on the device performance. The signal propagation speed of the CMOS on the St-Si/SGOI wafer was twice as high as that of the Si-on-insulator CMOS.

本文言語英語
ホスト出版物のタイトルICSICT-2006
ホスト出版物のサブタイトル2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
出版社IEEE Computer Society
ページ100-103
ページ数4
ISBN(印刷版)1424401615, 9781424401611
DOI
出版ステータス出版済み - 1 1 2006
イベントICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国
継続期間: 10 23 200610 26 2006

出版物シリーズ

名前ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

その他

その他ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country中国
CityShanghai
Period10/23/0610/26/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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