Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E

M. Sugizaki, S. Kubo, T. Murakami, N. Ota, H. Ozawa, T. Takahashi, H. Kaneda, Naoko Iyomoto, T. Kamae, M. Kokubun, A. Kubota, K. Makishima, T. Tamura, M. Tashiro, K. Koyama, H. Tsunemi

研究成果: ジャーナルへの寄稿Conference article

10 引用 (Scopus)

抜粋

ASTRO-E is the next Japanese X-ray satellite to be launched in the year of 2000. It carries three high-energy astrophysical experiments, including the Hard X-ray Detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40-700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 × 20 mm2 in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm2. We have developed the 2 mm thick silicon PIN diodes which have a low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p+ layer and the implantation process.

元の言語英語
ページ(範囲)244-253
ページ数10
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
3115
DOI
出版物ステータス出版済み - 12 1 1997
外部発表Yes
イベントHard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications - San Diego, CA, 米国
継続期間: 7 31 19978 1 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • これを引用

    Sugizaki, M., Kubo, S., Murakami, T., Ota, N., Ozawa, H., Takahashi, T., Kaneda, H., Iyomoto, N., Kamae, T., Kokubun, M., Kubota, A., Makishima, K., Tamura, T., Tashiro, M., Koyama, K., & Tsunemi, H. (1997). Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E. Proceedings of SPIE - The International Society for Optical Engineering, 3115, 244-253. https://doi.org/10.1117/12.277691