Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth

Shinichi Nishizawa, H. Yamaguchi, T. Kato, N. Oyanagi, S. Yoshida, K. Arai

研究成果: Contribution to journalArticle査読

抄録

X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.

本文言語英語
ページ(範囲)37-42
ページ数6
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
63
8-9
出版ステータス出版済み - 12 1 1999
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

フィンガープリント 「Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル