Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth

Shinichi Nishizawa; H. Yamaguchi; T. Kato; N. Oyanagi; S. Yoshida; K. Arai

Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth

Shinichi Nishizawa, H. Yamaguchi, T. Kato, N. Oyanagi, S. Yoshida, K. Arai

研究成果: Contribution to journal › Article › 査読

抄録

X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.

本文言語	英語
ページ（範囲）	37-42
ページ数	6
ジャーナル	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
巻	63
号	8-9
出版ステータス	出版済み - 12 1 1999
外部発表	はい

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

フィンガープリント「Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth. / Nishizawa, Shinichi; Yamaguchi, H.; Kato, T.; Oyanagi, N.; Yoshida, S.; Arai, K.

In: Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, Vol. 63, No. 8-9, 01.12.1999, p. 37-42.

研究成果: Contribution to journal › Article › 査読

@article{42c39427a0e646cfb15bd0283c4a2147,

title = "Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth",

abstract = "X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.",

author = "Shinichi Nishizawa and H. Yamaguchi and T. Kato and N. Oyanagi and S. Yoshida and K. Arai",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "63",

pages = "37--42",

journal = "Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory",

issn = "0366-9092",

publisher = "Denshi Gijutsu Sogo Kenkyujo",

number = "8-9",

}

TY - JOUR

T1 - Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth

AU - Nishizawa, Shinichi

AU - Yamaguchi, H.

AU - Kato, T.

AU - Oyanagi, N.

AU - Yoshida, S.

AU - Arai, K.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.

AB - X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.

UR - http://www.scopus.com/inward/record.url?scp=0033310490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033310490&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033310490

VL - 63

SP - 37

EP - 42

JO - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

JF - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

SN - 0366-9092

IS - 8-9

ER -