Device simulation of ditch and elevated electrode structures in organic thin-film transistors

Chang Hoon Shim, Takashi Sekiya, Reiji Hattori

    研究成果: Contribution to journalArticle査読

    2 被引用数 (Scopus)

    抄録

    A novel organic thin-film transistor structures named the "ditch structure" or "elevated electrode structure" is proposed. Device simulations show that the electrical properties of this structure are almost the same as those of a staggered structure (top-contact structure). These results are explained in terms of the electric field concentration at source electrodes with sharp corners and the electric field being vertical to the direction of the gate. The manufacturing process of this structure is as simple as that of a planar structure (bottom-contact structure), and the performance is as high as that of a staggered structure.

    本文言語英語
    論文番号024303
    ジャーナルJapanese journal of applied physics
    51
    2 PART 1
    DOI
    出版ステータス出版済み - 2 2012

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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